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D4NE65 Datasheet(PDF) 3 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

Part # D4NE65
Description  4A 650V N-channel Enhancement Mode Power MOSFET
PDF  13 Pages
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Manufacturer  WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]
Direct Link  http://www.jswxdh.cn
Logo WXDH - Jiangsu Donghai Semiconductor Technology Co.,Ltd

D4NE65 Datasheet(HTML) 3 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

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ROUM Semiconductor Technology CO.,LTD.
Rev. 1.0
www.roum.cn
Page 3 of 13
B4NE65
Reverse Recovery Time
trr
TJ=25℃,IF=4A,
dIF/dt=100A/μS,VGS=0V
--
250
--
nS
Reverse Recovery
Charge
Qrr
--
1200
--
nC
Notes：
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=10mH,ID=5.5A,VDD=50V,VGATE=650V,Start TJ=25℃.
6. ISD=4A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃.



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