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TPC8014 Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part # TPC8014
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
PDF  7 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8014 Datasheet(HTML) 5 Page - Toshiba Semiconductor

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TPC8014
2004-07-06
5
−80
−40
0
40
80
160
120
0
5
10
25
15
20
Common source
Pulse test
VGS = 4.5 V
ID = 11, 5.5, 2.5 A
10
ID = 11, 5.5, 2.5 A
RDS (ON) – Ta (α)
Ambient temperature Ta (°C)
IDR – VDS
Drain-source voltage VDS (V)
Vth – Ta
Ambient temperature Ta (°C)
Capacitance – VDS
Drain-source voltage VDS (V)
PD – Ta
Ambient temperature Ta (°C)
0
0
0.4
0.8
1.2
1.6
2
50
100
150
200
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t
= 10 s
(1)
(2)
Dynamic input/output characteristics
Total gate charge Qg (nC)
0.1
1
10
100
10
100
1000
10000
Crss
Coss
Ciss
Common source
VGS = 10 V
ID = 1 mA
Pulse test
0.1
1
10
0
0.4
0.6
0.8
1.2
0.2
100
1
Common source
Ta
= 25°C
Pulse test
3
1
5
10
VGS = 10 V
−80
−40
0
40
80
120
0
1
3
2
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0.5
1.5
2.5
0
15
10
20
30
5
25
010
20
30
Common source
Ta
= 25°C
ID = 11 A
Pulse test
VDS
VDD = 24 V
40
50
60
12
6
VDD = 24 V
6
12
0
15
10
20
30
5
25



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