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TPC8014 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPC8014 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
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5 / 7 page ![]() TPC8014 2004-07-06 5 −80 −40 0 40 80 160 120 0 5 10 25 15 20 Common source Pulse test VGS = 4.5 V ID = 11, 5.5, 2.5 A 10 ID = 11, 5.5, 2.5 A RDS (ON) – Ta (α) Ambient temperature Ta (°C) IDR – VDS Drain-source voltage VDS (V) Vth – Ta Ambient temperature Ta (°C) Capacitance – VDS Drain-source voltage VDS (V) PD – Ta Ambient temperature Ta (°C) 0 0 0.4 0.8 1.2 1.6 2 50 100 150 200 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (1) (2) Dynamic input/output characteristics Total gate charge Qg (nC) 0.1 1 10 100 10 100 1000 10000 Crss Coss Ciss Common source VGS = 10 V ID = 1 mA Pulse test 0.1 1 10 0 0.4 0.6 0.8 1.2 0.2 100 1 Common source Ta = 25°C Pulse test 3 1 5 10 VGS = 10 V −80 −40 0 40 80 120 0 1 3 2 Common source VDS = 10 V ID = 1 mA Pulse test 0.5 1.5 2.5 0 15 10 20 30 5 25 010 20 30 Common source Ta = 25°C ID = 11 A Pulse test VDS VDD = 24 V 40 50 60 12 6 VDD = 24 V 6 12 0 15 10 20 30 5 25 |
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