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*1 Refer to MOS FET A.S.O curve

*2 MOS FET Tch-EAS curve

*3 Refer to MOS FET Ta-PD1 curve

*4 Refer to TF-PD2 curve for Control IC (See page 5)

*5 Maximum switching current.

The maximum switching current is the Drain current determined by the drive voltage of the IC and

threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and

Pin 5 due to patterning, the maximum switching current decreases as shown by V

Accordingly please use this device within the decrease value, referring to the derating curve of the

maximum switching current.

Absolute Maximum Ratings (Ta=25ºC)

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are

absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power

dissipation ratings are measured under board mounted and still air conditions.

Symbol

Definition

Terminals Max. Ratings

Units

Note

Drain Current

*1

3-2

16

A

Single Pulse

Ta=-20~+125℃

Vin

Input voltage for control part

4-5

35

V

Vth

O.C.P/F.B Pin voltage

1-5

6

V

58

W

With infintite heatsink

2.8

W

Without heatsink

Power dissipation for control part

(Control IC) *4

Internal frame temperature

Refer to recommended

in operation

operating temperature

Top

Operating ambient temperature

-

-20 ~ +125

℃

Tstg

Storage temperature

-

-40 ~ +125

℃

Tch

Channel temperature

-

150

℃

Single Pulse

Power dissipation for MOSFET *3

3-2

A

Single pulse avalanche energy *2

3-2

521

mJ

Maximum switching current *5

3-2

16

Specified by

Vin×Iin

-

-20 ~ +125

℃

4-5

0.49

W

Fig.1

IRIS-F6456S

Recommended operating conditions

Time for input of quasi resonant signals

For the quasi resonant signal inputted to O.C.P/F.B Pin

at the time of quasi resonant operation, the signal shall

be wider than T

th(2).

Vth(2)

Tth(2)≧1.0μsec

0V