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LP1130B Datasheet(PDF) 4 Page - Lowpower Semiconductor inc |
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LP1130B Datasheet(HTML) 4 Page - Lowpower Semiconductor inc |
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4 / 5 page ![]() LP1130B-00 Apr.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 4 of 5 Preliminary Datasheet LP1130B Electrical Characteristics (TA=25°C, unless otherwise noted.) Characteristic Symbol Condition Min Typ Max Unit Supply Supply Voltage Range VCC − 4.6 − 13.2 V Supply Current ISYS VBST=12V, VEN=0V − 0.7 − mA EN Input Input Voltage High VEN_HI − 2.0 − − V Input Voltage Low VEN_LO − − − 0.8 V Hysteresis VEN_HYS − − 300 − mV Input Current IEN No internal pull-up or pull-down resistors −1.0 − +1.0 μA PWM Input Input Voltage High VPWM_HI − 2.0 − − V Input Voltage Low VPWM_LO − − − 0.8 V Hysteresis VPWM-HYS − − 300 − mV Input Current IPWM No internal pull-up or pull-down resistors −1.0 − +1.0 μA Under Voltage Lockout UVLO Startup VUVLO − - 4.3 - V Hysteresis VUVLO-HYS − - 0.3 - V POWER MOSFET Zero Gate Voltage Drain Current IDSS VIN=30V, EN=0 1 μA High side switch On-Resistance RDS(ON)-H VCC=9V 10 mΩ Low side switch On-Resistance RDS(ON)-L 10 THERMAL SHUTDOW N Thermal shutdown threshold TSD 160 ℃ Thermal shutdown threshold hysteresis TSD-HYS 30 ℃ |
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