MJF15030 MJF15031

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0)

VCEO(sus)

150

—

Vdc

Collector Cutoff Current (VCE = 150 Vdc, IB = 0)

ICEO

—

10

µAdc

Collector Cutoff Current (VCB = 150 Vdc, IE = 0)

ICBO

—

10

µAdc

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

IEBO

—

10

µAdc

ON CHARACTERISTICS (1)

DC Current Gain (IC = 0.1 Adc, VCE = 2 Vdc)

(IC = 2 Adc, VCE = 2 Vdc)

(IC = 3 Adc, VCE = 2 Vdc)

(IC = 4 Adc, VCE = 2 Vdc)

hFE

40

40

40

20

—

—

—

—

—

Typ

DC Current Gain Linearity

(VCE from 2 V to 20 V, IC from 0.1 A to 3 A) (NPN to PNP)

hFE

2

3

(VCE from 2 V to 20 V, IC from 0.1 A to 3 A) (NPN to PNP)

FE

3

Collector–Emitter Saturation Voltage (IC = 1 Adc, IB = 0.1 Adc)

VCE(sat)

—

0.5

Vdc

Base–Emitter On Voltage (IC = 1 Adc, VCE = 2 Vdc)

VBE(on)

—

1

Vdc

DYNAMIC CHARACTERISTICS

Current Gain–Bandwidth Product (2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

fT

30

—

MHz

NOTES:

1. Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2%.

2. fT = hfe• ftest.

t, TIME (ms)

1

0.01

0.3

0.2

0.1

0.05

0.02

0.5

10

30

50

100

300

500

1K

3K

5K

SINGLE PULSE

R

θJC(t) = r(t) RθJC

TJ(pk) – TC = P(pk) R

θJC(t)

1

5

3

10K

0.5

0.3

0.03

0.1

0.2

20

200

2K

2

Figure 1. Thermal Response

Figure 2. Forward Bias Safe Operating Area

100

µs

5 ms

dc

20

3

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5

200

5

3

10

2

0.1

0.03

WIREBOND LIMIT

THERMAL LIMIT

SECONDARY BREAKDOWN

LIMIT @ TC = 25°C

10

30

50

70

1

0.02

100

2

7

20

0.05

0.2

0.3

0.5

150

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figures 2 and 3 is based on TJ(pk) = 150_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

_C. TJ(pk) may be calculated from the data in Figure 1.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.