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EPC2001C Datasheet(PDF) 3 Page - Efficient Power Conversion Corporation. |
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EPC2001C Datasheet(HTML) 3 Page - Efficient Power Conversion Corporation. |
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3 / 6 page ![]() eGaN® FET DATASHEET EPC2001C EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 3 TJ – Junction Temperature ( ˚C ) 1.8 2 1.6 1.4 1.2 1 0.8 0.6 0 25 50 75 100 125 150 ID= 25 A VGS = 5 V Figure 8: Normalized On Resistance vs. Temperature 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0.6 0 25 50 75 100 125 150 ID = 5 mA Figure 9: Normalized Threshold Voltage vs. Temperature TJ – Junction Temperature ( ˚C ) 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VSD – Source-to-Drain Voltage (V) 12 24 36 48 60 72 25˚C 125˚C Figure 7: Reverse Drain-Source Characteristics VDS – Drain-to-Source Voltage (V) 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 Figure 5a: Capacitance (Linear Scale) VDS – Drain-to-Source Voltage (V) 0.01 0.1 1 0.001 0 20 40 60 80 100 Figure 5b: Capacitance (Log Scale) QG – Gate Charge (nC) 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 6 5 7 8 ID = 25 A VDS= 50 V Figure 6: Gate Charge COSS = CGD+CSD CISS = CGD+CGS CRSS = CGD COSS = CGD+CSD CISS = CGD+CGS CRSS = CGD |
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