MJF6388 MJF6668

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

VCEO(sus)

100

—

Vdc

Collector Cutoff Current

(VCE = 80 Vdc, IB = 0)

ICEO

—

10

µAdc

Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc)

ICEX

—

—

10

3.0

µAdc

mAdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ICBO

—

10

µAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

—

2.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE

3000

1000

200

100

15000

—

—

—

—

Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc)

VCE(sat)

—

—

—

—

2.0

2.0

2.5

3.0

Vdc

Base–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc)

VBE(sat)

—

—

2.8

4.5

Vdc

Base–Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)

VBE(on)

—

2.5

Vdc

DYNAMIC CHARACTERISTICS

Small–Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)

|hfe|

20

—

—

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

MJF6388

MJF6668

Cob

—

200

300

pF

Insulation Capacitance (Collector–to–External Heatsink)

Cc–hs

—

3.0 Typ

pF

Small–Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)

hfe

1000

—

—

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2.0%.

BASE

EMITTER

COLLECTOR

≈ 8 k

≈ 120

BASE

EMITTER

COLLECTOR

≈ 8 k

≈ 120

NPN

MJF6388

PNP

MJF6668

Figure 1. Darlington Schematic