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WSD20L70DN Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSD20L70DN Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 5 page  Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA - 20 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.0232 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=- 4.5V , ID=-16A --- 6.7 7.9 m Ω VGS=- 2.5V , ID=-12A --- 8.4 9.8 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA - 0.2 - 0.6 - 0.9 V △ VGS(th) VGS(th) Temperature Coefficient --- 4.6 --- mV/℃ IDSS Drain-Source Leakage Current VDS=- 20V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=- 20V , VGS=0V , TJ=55℃ --- --- -5 IGSS Gate-Source Leakage Current VGS=± 8V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=-5V , ID=- 20A --- 110 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3 --- Ω Qg Total Gate Charge (-4.5V) VDS=-1 0V , VGS=-4.5V , ID=-16A --- 70 100 nC Qgs Gate-Source Charge --- 9.2 --- Qgd Gate-Drain Charge --- 18.4 --- Td(on) Turn-On Delay Time VDD=-1 0V , VGS=-4.5V , RG= 3Ω ID=-1A ,RL=0.5Ω --- 18 --- ns Tr Rise Time --- 52 --- Td(off) Turn-Off Delay Time --- 285 --- Tf Fall Time --- 123 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 5625 --- pF Coss Output Capacitance --- 927 --- Crss Reverse Transfer Capacitance --- 716 --- Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=- 10V , L=0.5mH , IAS=-16A 100 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- - 10 A ISM Pulsed Source Current 2,6 --- --- - 100 A VSD Diode Forward Voltage 2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time IF=- 16A ,dI/dt=100A/µs, T J=25℃ 78 --- nS Qrr Reverse Recovery Charge --- 495 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper ,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=- 10V,VGS=-10V,L=0.1mH,IAS=-16A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Guaranteed Avalanche Characteristics Diode Characteristics Electrical Characteristics (TJ=25 ℃, unless otherwise noted) WSD20L70DN Page 2 www.winsok.tw Dec.2014 --- - P-Ch MOSFET VGS=- 1.8V , ID=-9A --- 10.3 12.2 VGS=- 1.5V , ID=-8A --- 12.3 15.5 VGS=- 1.2V , ID=-5A --- 17.6 19.5 |
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