HM5435 datasheet(4/7 Pages) HMSEMI

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Electrical Characteristics

Note:VVIN =3.5V, TA=25℃,unless otherwise specification.

Parameters

Test Condition

Min

Typ Max Unit

Voltage

Over-Charge Detection Voltage

4.27

4.30

4.33

Over-Charge Release Voltage

4.12

4.15

4.18

Over-Discharge Detection Voltage

2.46

2.50

2.54

Over-Discharge Release Voltage

2.86

2.90

2.94

Charger Detection Voltage

-0.50

Current

Over-Discharge Current Detection 1

VDD=3.5V

Over-Discharge Current Detection 2

VDD=3.5V

Load Short Detection

VDD=3.5V

Normal Operator Current

VDD=3.5V, VBATN=0V

3.0

Power Down Current

VDD=2.0V, BATN floating

0.1

Delay Time

Over-Charge Voltage Detection Delay Time

200

Over-Discharge Voltage Detection Delay Time

Over-Discharge Current Detection 1 Delay Time

Over-Discharge Current Detection 2 Delay Time

2.5

Load Short Detection Delay Time

BATN Internal Resistance

Internal Resistance between BATN and VDD

VDD=3.5V BATN=1.0V

320

kΩ

Internal Resistance between BATN and GND

VDD=2.0V BATN=1.0V

100

kΩ

Power FET on Resistance

VDD=3.5V, IBATN =1.0A

mΩ

Over Temperature Protection

100

℃

Over Temperature Hybrid

℃

Note: Parameter with * is used for 4.35V Battery Protect, Other is for 4.2V Battery Protect

HM5435

HM5435 Datasheet(PDF) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

HM5435 Datasheet(HTML) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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