WSD4066DN datasheet(2/7 Pages) WIINSOK

2 / 7 page

WSD4066DN

www.winsok.tw

Page 2

Dec.2014

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

DSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250A

IDSS

Zero Gate Voltage Drain Current

VDS=32V, VGS=0V

A

TJ=85°C

GS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250A

1.0

1.5

2.0

GSS

Gate Leakage Current

VGS=±20V, VDS=0V

±100

DS(ON)

Drain-Source On-state Resistance

VGS=10V, IDS=14A



VGS=4.5V, IDS=12 A

Diode Characteristics

V c

Diode Forward Voltage

ISD=1A, VGS=0V

0.75

1.1

Reverse Recovery Time

IDS=6A, dlSD /dt=100A/

s

Reverse Recovery Charge

8.7

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

2.5



iss

Input Capacitance

VGS=0V,

VDS=20V,

Frequency=1.0MHz

815

oss

Output Capacitance

rss

Reverse Transfer Capacitance

d(ON)

Turn-on Delay Time

VDD

=20V,

RL=20

, IDS=1A,

VGEN=10V, RG=6

7.8

Turn-on Rise Time

6.9

d( OFF)

Turn-off Delay Time

22.4

Turn-off Fall Time

4.8

Gate Charge Characteristics

Total Gate Charge

VDS=20V, VGS=10V,

IDS=6A

15.7

Total Gate Charge

VDS=20V, VGS=4.5V,

IDS=6A

7.5

10.5

Qgth

Threshold Gate Charge

1.85

Gate-Source Charge

3.24

Gate-Drain Charge

2.75

Note c：Pulse test ; pulse width

300

s, duty cycle2%.

Note d：Guaranteed by design, not subject to production testing.

Dual N-Ch MOSFET

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