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WSF20P03 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF20P03 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 5 page  BVDSS RDSON ID -30V 26mΩ - 27A Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch TO-252 Pin Configuration Product Summery Symbol Parameter Rating Units 10s Steady State VDS Drain-Source Voltage -30 V VGS Gate-Sou rce Voltage ± 25 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V 1 - 27 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V 1 -20 A ID@TA=25℃ Continuous Drain Current, VGS @ -10V 1 - 9 - 8.5 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V 1 - 8 - 7.4 A IDM Pulsed Drain Current 2 - 60 A EAS Single Pulse Avalanche Energy 3 93 mJ IAS Avalanche Current - 25 A PD@TC=25℃ Total Power Dissipation 4 25 W PD@TA=25℃ Total Power Dissipation 4 3.5 2.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃ /W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 25 ℃ /W RθJC Thermal Resistance Junction-Case 1 --- 2.8 ℃ /W Absolute Maximum Ratings Thermal Data The WSF20P03 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WSF20P03 meet the RoHS and Green Product requirement with full function reliability approved. WSF20P03 P-Ch MOSFET Page 1 www.winsok.tw Dec.2014 |
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