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MCP6D11T-E Datasheet(PDF) 3 Page - Microchip Technology |
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MCP6D11T-E Datasheet(HTML) 3 Page - Microchip Technology |
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3 / 60 page ![]() 2019 Microchip Technology Inc. DS20006162A-page 3 MCP6D11 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † VDD –VSS .................................................................................................................................................................6.0V Supply Voltage Turn-on/off max. dV/dt at +25°C .............................................................................................. ±0.35V/µs Supply Voltage Turn-on/off max. dV/dt at +125°C .............................................................................................. ±0.2V/µs Current at all Inputs (continuous) ........................................................................................................................ ±10 mA Voltage at all Inputs and Outputs ...............................................................................................VSS – 0.3V to VDD+0.3V Differential Input Voltage .........................................................................................................................................±1.0V Current at Output and Supply Pins (continuous)...................................................................................................±20 mA Storage Temperature .............................................................................................................................-65°C to +150°C Maximum Junction Temperature .......................................................................................................................... +155°C ESD protection on all pins (HBM, CDM) 4kV, 2kV †Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. AC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = 25°C, VDD = +2.5V to 5.5V, VSS =0V, PD\ = VDD, VOCM = open, VICM =VDD/2, Single-ended input, G = 1V/V, RF =RG =1 k, RL =1 k between differential outputs. Parameters Sym. Min. Typ. Max. Units Test Level (Note 1) Conditions AC Response Gain-Bandwidth Product GBWP — 90 — MHz C G = 10V/V Bandwidth (Small-signal, -3 dB) BW — 82 — MHz C G = 1V/V, VOUT_DM = 20mVpp, VDD =5V —80 — G = 1V/V, VOUT_DM = 20mVpp, VDD =3V —48 — G = 2V/V, VOUT_DM = 20mVpp, VDD =5V — 10 — G = 10V/V, VOUT_DM = 20mVpp, VDD =5V Bandwidth (Large-signal, -3 dB) BW — 6.4 — MHz C G = 1V/V, VOUT_DM = 2Vpp, VDD =5V Bandwidth for 0.1 dB Gain Flatness —4 — MHz C G = 1V/V, VOUT_DM = 2Vpp, VDD =5V Slew Rate (differential) SR — 27 — V/µs C G = 1V/V, VOUT_DM = 2V step, VDD =5V —26 — G = 2V/V, VOUT_DM = 2V step, VDD =5V —24 — G = 1V/V, VOUT_DM = 2V step, VDD =3V —23 — G = 2V/V, VOUT_DM = 2V step, VDD =3V Settling Time to 0.1% tS — 160 — ns C G = 1V/V, VOUT_DM = 2V step, VDD =5V — 170 — G = 1V/V, VOUT_DM = 2V step, VDD =3V Settling Time to 0.01% — 200 — G = 1V/V, VOUT_DM = 2V step, VDD =5V — 215 — G = 1V/V, VOUT_DM = 2V step, VDD =3V Rise and Fall Times tR, tF —34 — ns C VOUT_DM = 1Vpp step Overdrive Recovery Time trec — 150 — ns C VDD = 5V, 0.5V overdrive — 200 — VDD = 3V, 0.5V overdrive Closed-Loop Output Impedance Rout —0.1 — C f = 1 MHz, differential Output Balance Error BAL — 85 — dB C At DC Note 1: “Test Level” designation: A = 100% production tested at 25°C; B = not production tested, limits set by characterization and/or simulation, C = values for information only (based on characterization or design). |
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