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WSF40P04 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSF40P04
Description  P-Ch MOSFET
PDF  7 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF40P04 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-
40
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.0232
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V , ID=-
12A
---
32
42
m
Ω
VGS=-4.5V , ID=-
8A
---
52
58
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1
-
2
-
3
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
4.6
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-
32V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-
32V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±2
0V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-
12A
---
10
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
6.0
---
Ω
Qg
Total Gate Charge (-4.5V)
VDS=-
20V , VGS=-10V , ID=-15A
---
20
---
nC
Qgs
Gate-Source Charge
---
2.5
---
Qgd
Gate-Drain Charge
---
4.5
---
Td(on)
Turn-On Delay Time
VDD=-
20V , VGS=-10V ,
RG=
1.6Ω
---
5
---
ns
Tr
Rise Time
---
12
---
Td(off)
Turn-Off Delay Time
---
20
---
Tf
Fall Time
---
4.5
---
Ciss
Input Capacitance
VDS=-
25V , VGS=0V , f=1MHz
---
840
pF
Coss
Output Capacitance
---
92
Crss
Reverse Transfer Capacitance
---
60
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
-
10
A
ISM
Pulsed Source Current
2,6
---
---
-
20
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
V
trr
Reverse Recovery Time
IF=-1
2A
,dI/dt=100A/µs,
20
---
nS
Qrr
Reverse Recovery Charge
---
16
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAR=-12A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSF40P04
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
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