Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

WSF45P06 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSF45P06
Description  P-Ch MOSFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF45P06 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WSF45P06 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF45P06 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF45P06 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF45P06 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WSF45P06 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.012
---
V/℃
VGS=-10V , ID=-18A
---
3
0
40
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-12A
---
52
65
m
Ω
VGS(th)
Gate Threshold Voltage
-1.0
-1.6
-2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =-250uA
---
4.32
---
mV/℃
VDS=-32V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=-32V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-18A
---
12.6
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
13
16
Ω
Qg
Total Gate Charge (-4.5V)
---
4.1
---
Qgs
Gate-Source Charge
---
4.9
---
Qgd
Gate-Drain Charge
VDS=-20V , VGS=-4.5V , ID=-12A
---
5.6
---
nC
Td(on)
Turn-On Delay Time
---
19.2
---
Tr
Rise Time
---
12.8
---
Td(off)
Turn-Off Delay Time
---
48.6
---
Tf
Fall Time
VDD=-15V , VGS=-10V , RG=3.3Ω,
ID=-1A
---
4.6
---
ns
Ciss
Input Capacitance
---
1914
---
Coss
Output Capacitance
---
1
58
---
Crss
Reverse Transfer Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
116
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=-25V , L=0.1mH , IAS=-15A
20
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
---
---
-23
A
ISM
Pulsed Source Current
2,6
VG=VD=0V , Force Current
---
---
-46
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
V
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-2
0A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
WSF45P06
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014



Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com