WSF45P10 datasheet(2/9 Pages) WIINSOK

2 / 9 page

WSF45P10

P-Ch MOSFET

Page 2

www.winsok.tw

Dec.2014

Electrical Characteristics (T

C=25°C Unless Otherwise Noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=-250

µA

-100

VDS=-100 V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

-10

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250

µA

-1

-2

-3

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±100

RDS(ON)*

Drain-Source On-state Resistance

VGS=-10V, IDS=-20A

Ω

Diode Characteristics

Diode Forward Voltage

ISD=-20A, VGS=0V

trr

VSD

Reverse Recovery Time

-0.8

-1.2

Qrr

Reverse Recovery Charge

ISD=-20A,dlSD/dt=-100A/

µ s

Drain-Source On-state Resistance

VGS=-4.5V, IDS=-20A

58.5

Ω

RDS(ON)*

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

Ω

Ciss

Input Capacitance

5720

Coss

Output Capacitance

790

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=-20V,

Frequency=1.0MHz

450

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

VDD=-50V, RG = 6

Ω,

IDS =-20A, VGS=-10V,

Gate Charge Characteristics

Total Gate Charge

125

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS=-80V,VGS=-10V,

IDS=-20A

Note * : Pulse test ; pulse width

≤300

µs, duty cycle≤2%.

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