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2CL4516 Datasheet(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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2CL4516 Datasheet(HTML) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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1 / 2 page ![]() 2CL4516 450mA 16kV High Voltage Silicon Diodes for Micro-wave oven ------------------------------------------------------------------------------------------------------------------------- GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2020-08 1 / 2 INTRODUCE: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High overload surge capability. 2. High Current,Low Forward Voltage. 3. Avalanche Characteristic. 4. Conform to RoHS and SGS. 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. High voltage power supply rectifier. 2. High voltage rectifier circuit for microwave oven. 3. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 2.50 grams (approx). SHAPE DISPLAY: Part Marking: Code: T4516 HVGT Cathode Mark: SIZE: (Unit:mm) HVGT NAME: DO-722 MAXIMUM RATINGS AND CHARACTERISTICS: Ta=25°C (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM 16 kV Average Forward Current Maximum IFAVM 60HZ Half-Sine Wave, Resistance Load, Ta=60°C 450 mA Non-Repetitive Forward Surge Current IFSM 60Hz Half-Sine Wave; 8.3mS; 1Cycle 30 A Reverse surge current IRSM WP=1ms, Rectangular-Wave, One-shot, 100 mA Junction Temperature TJ 130 °C Allowable Operation Case Temperature Tc -40~+130 °C Storage Temperature TSTG -40~+130 °C ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless Otherwise Specified) Items Symbols Condition Data value Units Maximum Forward Voltage Drop VFM at 25°C; at IFAVM 14 V Maximum Reverse Current IR1 at 25°C; at VRRM 5.0 uA IR2 at 100°C; at VRRM 50 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR -- nS Reverse Breakdown Voltage VZ at 25°C; IR=100uA 16.5 kV |
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