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AS7C33256PFD18B Datasheet(PDF) 16 Page - Alliance Semiconductor Corporation

Part # AS7C33256PFD18B
Description  3.3V 256K x 18 pipeline burst synchronous SRAM
PDF  19 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C33256PFD18B Datasheet(HTML) 16 Page - Alliance Semiconductor Corporation

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AS7C33256PFD18B
®
1/31/05; v.1.2
Alliance Semiconductor
P. 16 of 19
AC test conditions
Z0 = 50Ω
DOUT
50
Figure B: Output load (A)
30 pF*
Figure A: Input waveform
10%
90%
GND
90%
10%
+3.0V
• Output load: see Figure B, except for tLZC, tLZOE, tHZOE, tHZC, see Figure C.
• Input pulse level: GND to 3V. See Figure A.
• Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A.
• Input and output timing reference levels: 1.5V.
VL = 1.5V
for 3.3V I/O;
= VDDQ/2
for 2.5V I/O
353
Ω / 1538Ω
5 pF*
319
Ω / 1667Ω
DOUT
GND
Figure C: Output load (B)
*including scope
and jig capacitance
Thevenin equivalent:
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
Notes
1
For test conditions, see AC Test Conditions, Figures A, B, C.
2
This parameter measured with output load condition in Figure C.
3
This parameter is sampled, but not 100% tested.
4tHZOE is less than tLZOE; and tHZC is less than tLZC at any given temperature and voltage.
5
tCH measured as HIGH above VIH and tCL measured as LOW below VIL.
6
This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs
must meet the setup and hold times for all rising edges of CLK when chip is enabled.
7
Write refers to GWE, BWE, BW[a,b].
8
Chip select refers to CE0, CE1, CE2



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