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SF52G Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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SF52G Datasheet(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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1 / 3 page ![]() SF52G THRU SF58G DO-27 1 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Super Fast Silicon Rectifiers Reverse Voltage - 100 to 600 V Forward Current - 5 A FEATURES For surface mounted applications Low profile package Glass Passivated Chip Junction Ideal for automated placement Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: DO-201AD/DO-27 Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: DO-201AD/DO-27 Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. (1)Measured at 1 MHz and applied reverse voltage of 4 V D.C (2)Reverse recovery time test condition: IF=0.5A IR=1.0A Irr=0.25A Parameter Symbols SF52G SF53G SF54G SF56G SF57G SF58G Units Maximum Repetitive Peak Reverse Voltage VRRM 100 150 200 400 500 600 V Maximum RMS voltage VRMS 70 105 140 280 350 420 V Maximum DC Blocking Voltage VDC 100 150 200 400 500 600 V Maximum Average Forward Rectified Current at Tc = 100 °C IF(AV) 5.0 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load IFSM 150.0 A Maximum Instantaneous Forward Voltage at 5.0A VF 0.95 1.25 1.7 V Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta=125 °C IR 10 500 μA Maxinum reverse recovery time (Note 1) Trr 35 nS Typical Junction Capacitance ( Note 2) Cj 78.0 pF Typical Thermal Resistance RθJA 45.0 °C/W Operating and Storage Temperature Range Tj, Tstg -55 ~ +150 °C 98 0. g / 0.0345oz |
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