Dual Hot Carrier Mixer Diodes

These devices are designed primarily for UHF mixer applications

but are suitable also for use in detector and ultra–fast switching

circuits.

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

VR

7.0

VCC

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

–55 to +150

°C

DEVICE MARKING

MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Forward Voltage

(IF = 10 mAdc)

VF

—

0.60

V

Reverse Voltage Leakage Current (Note 3.)

(VR = 3.0 V)

(VR = 7.0 V)

IR

—

—

0.25

10

mA

Capacitance

(VR = 0 V, f = 1.0 MHz)

C

—

1.0

pF

1. FR–5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

3. For each individual diode while the second diode is unbiased.

ON Semiconductort

© Semiconductor Components Industries, LLC, 2001

November, 2001 – Rev. 4

1

Publication Order Number:

MMBD352LT1/D

MMBD352LT1

MMBD353LT1

MMBD354LT1

MMBD355LT1

1

2

3

MMBD352LT1

CASE 318–08, STYLE 11

SOT–23 (TO–236AB)

1

ANODE

3

CATHODE/ANODE

2

CATHODE

MMBD353LT1

CASE 318–08, STYLE 19

SOT–23 (TO–236AB)

1

CATHODE

3

CATHODE/ANODE

2

ANODE

MMBD354LT1

CASE 318–08, STYLE 9

SOT–23 (TO–236AB)

3

CATHODE

2

ANODE

ANODE

1

ANODE

3

CATHODE

1

2

CATHODE

MMBD355LT1

CASE 318–08, STYLE 12

SOT–23 (TO–236AB)