WSP4445 datasheet(2/6 Pages) WIINSOK

2 / 6 page

WSP4445

P-Ch MOSFET

Page 2

www.winsok.tw

Dec.2014

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS=0V, IDS=-250mA

-40

VDS=-32V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

-30

VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=-250mA

-1.5

-2

-2.5

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±10

VGS=-20V, IDS=-16A

8.5

VGS=-10V, IDS=-16A

7.9

RDS(ON)

d Drain-Source On-state Resistance

VGS=-4.5V, IDS=-10A

11.5

Diode Characteristics

VSD

Diode Forward Voltage

ISD=-1A, VGS=0V

-0.75

-1

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ISD=-16A, dlSD/dt=100A/ms

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

3.2

Ciss

Input Capacitance

2764

Coss

Output Capacitance

417

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=-20V,

Frequency=1.0MHz

325

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF) Turn-off Delay Time

Turn-off Fall Time

VDD=-20V, RL=20W,

IDS=-1A, VGEN=-10V,

RG=6W

Gate Charge Characteristics

Total Gate Charge

Qgs

Gate-Source Charge

7.6

Qgd

Gate-Drain Charge

VDS=-20V, VGS=-10V,

IDS=-16A

Note d：Pulse test; pulse width

£300ms, duty cycle£2%.

Note e：Guaranteed by design, not subject to production testing.

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