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WSP4447 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSP4447 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 7 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA - 40 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.018 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V , ID=-1 3A --- 13 16 m Ω VGS=-4.5V , ID=- 5A --- 18 26 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1. 4 - 1.9 - 2.4 V △ VGS(th) VGS(th) Temperature Coefficient --- 5.04 --- mV/℃ IDSS Drain-Source Leakage Current VDS=- 32V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=- 32V , VGS=0V , TJ=55℃ --- --- -5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=-5V , ID=-10A --- 18 --- S Qg Total Gate Charge (-4.5V) VDS=- 20V , VGS=-10V , ID=-11A --- 32 --- nC Qgs Gate-Source Charge --- 5.2 --- Qgd Gate-Drain Charge --- 8 --- Td(on) Turn-On Delay Time VDD=- 20V , VGS=-10V , RG= 6Ω, ID=-1A ,RL=20Ω --- 14 --- ns Tr Rise Time --- 12 --- Td(off) Turn-Off Delay Time --- 41 --- Tf Fall Time --- 22 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 1500 --- pF Coss Output Capacitance --- 235 --- Crss Reverse Transfer Capacitance --- 180 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- - 3.0 A ISM Pulsed Source Current 2,6 --- --- - 18 A VSD Diode Forward Voltage 2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1. 1 V trr Reverse Recovery Time IF=-1 1A,dI/dt=100A/µs,TJ=25℃ --- 24 --- nS Qrr Reverse Recovery Charge --- 18 --- nC Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics WSP4447 P-Ch MOSFET Page 2 www.winsok.tw Dec.2014 Note 1,Pulse test; pulse width£300ms, duty cycle£2%. 2, Guaranteed by design, not subject to production testing. |
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