JFET - VHF/UHF Amplifier

Transistor

N–Channel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDS

25

Vdc

Gate–Source Voltage

VGS

25

Vdc

Gate Current

IG

10

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Junction and Storage Temperature

TJ, Tstg

–55 to +150

°C

DEVICE MARKING

MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0)

V(BR)GSS

–25

–

–

Vdc

Gate Reverse Current (VGS = –15 Vdc)

IGSS

–

–

–

–

–1.0

–1.0

nAdc

µAdc

Gate Source Cutoff Voltage

MMBFJ309

(VDS = 10 Vdc, ID = 1.0 nAdc)

MMBFJ310

VGS(off)

–1.0

–2.0

–

–

–4.0

–6.5

Vdc

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

MMBFJ309

(VDS = 10 Vdc, VGS = 0)

MMBFJ310

IDSS

12

24

–

–

30

60

mAdc

Gate–Source Forward Voltage (IG = 1.0 mAdc, VDS = 0)

VGS(f)

–

–

1.0

Vdc

SMALL–SIGNAL CHARACTERISTICS

Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)

|Yfs|

8.0

–

18

mmhos

Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)

|yos|

–

–

250

µmhos

Input Capacitance (VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)

Ciss

–

–

5.0

pF

Reverse Transfer Capacitance (VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)

Crss

–

–

2.5

pF

Equivalent Short–Circuit Input Noise Voltage

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)

en

–

10

–

nV

Hz

1. FR–5 = 1.0

 0.75  0.062 in.

ON Semiconductort

© Semiconductor Components Industries, LLC, 2001

November, 2001 – Rev. 2

1

Publication Order Number:

MMBFJ309LT1/D

MMBFJ309LT1

MMBFJ310LT1

1

2

3

CASE 318–08, STYLE 10

SOT–23 (TO–236AB)

2 SOURCE

3

GATE

1 DRAIN