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WSP4982 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSP4982 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 6 page  Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Sou rce Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 7.0 A ID@TC=70℃ Continuous Drain Current, VGS @ 10V 5.8 A IDM Pulsed Drain Currenta 28 A A PD@TA= 70℃ Total Power Dissipatio n TA=70°C 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambientb --- 110 ℃ /W RθJC Thermal Resistance Junction-Case --- 62.5 ℃ /W BVDSS RDSON ID 40V 24mΩ 7.0A Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applicatio Power Management in Note book. Battery Powered System. Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Thermal Data SOP -8 Pin Configuration Product Summery Page 1 www.winsok.tw Rev 1: Dec.2019 WSP4982 Dual N-Channel MOSFET The WSP4982 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . The WSP4982 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. Total Power Dissipation TA=25°C PD@TA=25℃ 1.28 Note a：Pulse width limited by max. junction temperature. Note b：Surface Mounted on 1in 2 pad area, t =999sec. Note c：UIS tested and pulse width limited by maximum junction temperature 150 oC (initial temperature Tj=25oC). |
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