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WSP6020 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSP6020
Description  N-Channel MOSFET
PDF  6 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSP6020 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.044
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=
15A
---
7
9
m
Ω
VGS=4.5V , ID=
10A
---
8
12
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.0
2.0
3.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4.
6
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=
60V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=
60V , VGS=0V , TJ=55℃
---
---
100
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
Qg
Total Gate Charge (10V)
VDS=
24V , VGS=10V , ID=10A
---
82
---
nC
Qgs
Gate-Source Charge
---
13
---
Qgd
Gate-Drain Charge
---
17
---
Td(on)
Turn-On Delay Time
VDD=30V , VGEN=10V , RG=6Ω
ID=4A
,RL=30Ω
---
26
ns
Tr
Rise Time
---
125
---
Td(off)
Turn-Off Delay Time
---
58
---
Tf
Fall Time
---
112
---
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
3760
---
pF
Coss
Output Capacitance
---
340
---
Crss
Reverse Transfer Capacitance
---
200
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=
12A
---
196
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.
2
V
trr
Reverse Recovery Time
IF=
6.3A , dI/dt=100A/µs , TJ=25℃
---
38
---
nS
Qrr
Reverse Recovery Charge
---
44
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=
12A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Guaranteed Avalanche Characteristics
Page 2
www.winsok.tw
Dec.2014
WSP6020
N-Channel MOSFET
---



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