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WSP6047 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSP6047 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 5 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 --- --- V VGS=-10V , ID=-4A --- 64 RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V , ID=-3A --- 80 104 mΩ VGS(th) Gate Threshold Voltage -1.0 -1.74 -2.5 V VGS=VDS , ID =-250uA VDS=-60V , VGS=0V --- --- -1 IDSS Drain-Source Leakage Current uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA Qg Total Gate Charge (-4.5V) --- 23 --- Qgs Gate-Source Charge --- 2.4 --- Qgd Gate-Drain Charge --- 5.7 --- nC Td(on) Turn-On Delay Time --- 13 --- Tr Rise Time --- 4 --- Td(off) Turn-Off Delay Time --- 45 --- Tf Fall Time --- 6 --- ns Ciss Input Capacitance --- 1135 --- Coss Output Capacitance --- 95 --- Crss Reverse Transfer Capacitance --- 60 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current --- --- -4.0 A VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics WSP6047 P-Ch MOSFET Page 2 www.winsok.tw Dec.2014 84 VDS = -30V, ID = -3.5A, VGS = -10V VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6 VGS=0V, VDS= -30V, f=1MHz A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. |
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