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WST2006 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WST2006
Description  Dual N-Channel MOSFET
PDF  5 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST2006 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WST2006 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST2006 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST2006 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST2006 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST2006 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.02
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V , ID=1.5A
---
5.5
7.5
mΩ
VGS=5V , ID=1A
---
---
13.5
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.0
1.5
2.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-2.5
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=30V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=30V , VGS=0V , TJ=125℃
---
---
500
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
10
nA
Td(on)
Turn-On Delay Time
VDD=30V , VGS=10V ,
RG=150Ω ,ID=0.2A
---
2
4.0
ns
Td(off)
Turn-Off Delay Time
---
10
20
Ciss
Input Capacitance
VDS=25V , VGS=0V , f=1MHz
---
22
pF
Coss
Output Capacitance
---
11
Crss
Reverse Transfer Capacitance
---
2.0
Note : Short duration test pulse used to minimize self-heating effect.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Page 2
www.winsok.tw
Dec.2014
WST2006
Dual N-Channel MOSFET
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