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2SA1213 Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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2SA1213 Datasheet(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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1 / 4 page  2SA1213 SOT-89 1 / 4 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Typ Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0us (typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 Electrical Characteristics Ta = 25 Absolute Maximum Ratings Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -10 mA， IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -100 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=- 50mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=- 50mA -1.2 hFE(1) VCE= -2V, IC= -0.5A 70 240 hFE(2) VCE= -2 V, IC= -2A 20 Turn-on time ton 0.1 Storage time tstg 1 Fall time tf 0.1 Collector output capacitance Cob VCB= -10V, IE= 0 40 pF Transition frequency fT VCE= -2V, IC= -0.5A ,f=1MHz 120 MHz V V us nA DC current gain See Test Circuit. Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -2 Base Current - Continuous IB -0.4 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ A ■ Classification of hfe(1) Type 2SA1213-O 2SA1213-Y Range 70-140 120-240 Marking NO NY 1 2 3 ■ Simplified outline(SOT-89) 1.Base 2.Collector 3.Emitter PNP Transistors |
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