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WST2337 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WST2337
Description  P-Ch MOSFET
PDF  6 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST2337 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-15
---
---
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V , ID=-4.1A
---
28
45
mΩ
VGS=-2.5V , ID=-3A
---
43
60
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-0.45
-0.7
-1.2
V
IDSS
Drain-Source Leakage Current
VDS=-12V , VGS=0V , TJ=25℃
---
---
-1
uA
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±
100
nA
Qg
Total Gate Charge
---
7.8
---
nC
Qgs
Gate-Source Charge
---
1.2
---
Qgd
Gate-Drain Charge
---
1.6
---
Td(on)
Turn-On Delay Time
---
12
---
ns
Tr
Rise Time
---
35
---
Td(off)
Turn-Off Delay Time
---
30
---
Tf
Fall Time
---
10
---
Ciss
Input Capacitance
---
1440
pF
Coss
Output Capacitance
---
280
---
Crss
Reverse Transfer Capacitance
---
190
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-4.1
A
VSD
Diode Forward Voltage
VGS=0V , IS=-1.6A , TJ=25℃
---
---
-1.2
V
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WST2337
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
VDS=-4V,VGS=0V,
F=1.0MHz
VDD=-4V,ID=-3.3A , RL=-
1.2Ω,VGEN=-4.5V,Rg=1Ω
VDS=-4V,ID=-4.1A,VGS=-4.5V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
---



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