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WST3392 Datasheet(PDF) 4 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WST3392 Datasheet(HTML) 4 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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4 / 5 page ![]() WST3392 Page 4 www.winsok.tw Dec.2014 Dual N-Ch MOSFET 0 2 4 6 8 10 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 0 50 100 150 200 250 300 0 5 10 (1V5 20 25 30 VDS olts) Figure 8: Capacitance Characteristics Ciss Coss Crss VDS=15V ID=3.5A 1 10 100 1000 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) TA=25°C 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 µs 10s 10 1 0 m µs s DC RDS(ON) limited TJ(Max)=150°C TA=25°C 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=150°C/W Ton T PD Single Pulse Typical Characteristics |
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