2SC4375 datasheet(1/2 Pages) YFWDIODE

Part #	2SC4375

Description	NPN Transistor

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Manufacturer	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

Direct Link	http://www.yfwdiode.com/

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2SC4375 SOT-89

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www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

30

V

Collector Emitter Voltage

VCEO

30

V

Emitter Base Voltage

VEBO

5

V

Collector Current - DC

IC

1.5

A

Collector Power Dissipation

PC

0.5

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

- 55 to + 150

℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = 2 V, IC = 500 mA

Current Gain Group

hFE

100

160

-

200

320

-

Collector Base Cutoff Current

at VCB = 30 V

ICBO

-

100

nA

Emitter Base Cutoff Current

at VEB = 5 V

IEBO

-

100

nA

Collector Base Breakdown Voltage

at IC = 1 mA

V(BR)CBO

30

-

V

Collector Emitter Breakdown Voltage

at IC = 10 mA

V(BR)CEO

30

-

V

Emitter Base Breakdown Voltage

at IE = 1 mA

V(BR)EBO

5

-

V

Collector Emitter Saturation Voltage

at IC = 1.5 A, IB = 30 mA

VCE(sat)

-

2

V

Transition Frequency

at VCE = 2 V, IC =500 mA

fT

-

120

-

MHz

Output Capacitance

at VCB = 10 V, IE = 0, f = 1 MHz

Cob

-

40

pF

Low collector saturation voltage

Excellent hFE characteristics

O

Y

Base Emitter Voltage

at VCE = 2 V, IC =500 mA

VBE

-

1

V

-

NPN Transistor

■

Absolute Maximum Ratings Ta = 25℃

■

Electrical Characteristics Ta = 25℃

⚫

Features

■

⚫

1

2

3

■

Simplified outline(SOT-89)

1.Base

2.Collector

3.Emitter

■

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2SC4375 Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

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