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TK8P25DA Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TK8P25DA Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 iscN-Channel MOSFET Transistor TK8P25DA · FEATURES · Low drain-source on-resistance: RDS(ON) = 0.5Ω (MAX) · Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Switching Voltage Regulators · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 7.5 A IDM Drain Current-Single Pulsed 30 A PD Total Dissipation @TC=25℃ 55 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 2.27 ℃ /W |
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