2SD1628 datasheet(1/4 Pages) YFWDIODE

Part #	2SD1628

Description	NPN Transistors

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Manufacturer	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

Direct Link	http://www.yfwdiode.com/

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2SD1628 SOT-89

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www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

1

2

3

■ Simplified outline(SOT-89)

1.Base

2.Collector

3.Emitter

NPN Transistors

■

Features

●

Collector Current Capability IC=5A

●

Collector Emitter Voltage VCEO=20V

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

60

Collector - Emitter Voltage

VCEO

20

Emitter - Base Voltage

VEBO

6

Collector Current - Continuous

IC

5

Collector Current - Pulse

ICP

8

0.5

1.5

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

A

Collector Power Dissipation

PC

W

Note.1 : Mounted on ceramic substrate of 250mm2X0.8mm

(Note.1)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

60

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA，IB= 0

20

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

6

Collector-base cut-off current

ICBO

VCB= 50 V , IE= 0

0.1

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0.1

Collector-emitter saturation voltage

VCE(sat) IC=3 A, IB=60mA

0.5

Base - emitter saturation voltage

VBE(sat) IC=3 A, IB=60mA

1.5

VCE= 2V, IC=500mA

120

560

VCE= 2V, IC=3 A

95

Turn-on time

ton

30

Storage time

tstg

300

Fall time

tf

40

Collector output capacitance

Cob

VCB= 10V,f=1MHz

45

pF

Transition frequency

fT

VCE= 10V, IC=50mA

120

MHz

uA

V

See Specified Test Circuit

ns

DC current gain

hFE

V

■

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2SD1628 Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

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