IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXFE 44N60

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

30

45

S

C

iss

8900

pF

C

oss

V

1000

pF

C

rss

330

pF

t

d(on)

42

ns

t

r

V

55

n s

t

d(off)

R

110

ns

t

f

45

ns

Q

g(on)

330

nC

Q

gs

V

60

nC

Q

gd

65

nC

R

thJC

0.25

K/W

R

thCK

0.07

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

44

A

I

SM

Repetitive;

176

A

pulse width limited by T

JM

V

SD

I

1.3

V

Note:1

t

rr

I

250

ns

Q

RM

1.4

µC

I

RM

8A

ISOPLUS-227 B

Please see IXFN44N60 data sheet

for characteristic curves.

Note: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

2. Test current I