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WST6004 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WST6004
Description  N-Ch MOSFET
PDF  5 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST6004 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.05
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V , ID=0.6A
---
140
450
mΩ
VGS=2.5V , ID=0.5A
---
180
765
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.35
---
1.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-3.7
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=16V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=16V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±
10
uA
gfs
Forward Transconductance
VDS=5V , ID=0.1A
---
880
---
mS
Td(on)
Turn-On Delay Time
VDD=15V , VGS=10V ,
RG=3.3Ω, ID=0.1A
---
6
---
ns
Tr
Rise Time
---
3.8
---
Td(off)
Turn-Off Delay Time
---
28
---
Tf
Fall Time
---
18
---
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
130
pF
Coss
Output Capacitance
---
20
Crss
Reverse Transfer Capacitance
---
16
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current1,4
VG=VD=0V , Force Current
---
---
100
mA
ISM
Pulsed Source Current2,4
---
---
0.5
A
VSD
Diode Forward Voltage2
VGS=0V , IS=0.2A , TJ=25℃
---
---
1
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature.
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
N-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
WST6004
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