Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

WST6005 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WST6005
Description  P-Ch MOSFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST6005 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WST6005 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST6005 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST6005 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST6005 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST6005 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.016
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-
0.45A
---
280
520
m
Ω
VGS=-2.5V , ID=-
0.35A
---
360
750
VGS=-1.8V , ID=-
0.25A
485
950
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-0.3
5
-0.
60
-1
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
3.97
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-16V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-16V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-
1A
---
6.2
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
9.5
12
Ω
Qg
Total Gate Charge (-4.5V)
VDS=-15V , VGS=-4.5V , ID=-
1A
---
4
7.8
nC
Qgs
Gate-Source Charge
---
0.
52
1.0
Qgd
Gate-Drain Charge
---
1.
15
2.0
Td(on)
Turn-On Delay Time
VDD=-15V , VGS=-4.5V ,
RG=3.3Ω ID=-
1A
---
10
8.0
ns
Tr
Rise Time
---
62
46
Td(off)
Turn-Off Delay Time
---
19
52
Tf
Fall Time
---
18
24.8
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
78
pF
Coss
Output Capacitance
---
24
Crss
Reverse Transfer Capacitance
---
20
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
-
0.3
A
ISM
Pulsed Source Current
2,4
---
---
-
0.9
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
trr
Reverse Recovery Time
IF=-0.5A
,dI/dt=100A/µs,TJ=25℃
---
16
---
nS
Qrr
Reverse Recovery Charge
---
3.5
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WST6005
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
---
---
---
---



Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com