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CD4148WSP Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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CD4148WSP Datasheet(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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1 / 6 page ![]() CD4148WSP SMD- 0805 1 / 6 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. THERMAL CHARACTERISTICS1) Parameter at Tamb=25oC1) Symbol Value Unit 200 mW Forward Power Dissipation Power derating above 25oC Ptot 1.6 mW/ oC Junction Temperature Tj 150 oC Thermal Resistance Junction to Ambient air RθJA 375 oC/W Operating& Storage Temperature range Tstg -55 to 150 oC 1) Valid provided that electrodes are kept at ambient temperature. FEATURES Silicon epitaxial planar diode SMD chip pattern, available in various dimension included 1206 & 0603 Leadfree and RoHS compliance components For small signal switching and operating ambient temperature less than 55°C and voltage withstand less than 60V; not suitable for AC switching input as rectified circuit and high reverse voltage location. MECHANICAL CHARACTERISTICS Size: 0805 Weight: approx. 6mg Marking: Cathode terminal CD4148WN is suitable for those application ■ Simplified outline(SMD-0805) MAXIMUM RATING1) Parameter at Tamb=25oC1) Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 75 V Average rectified current sin half wave rectification with resistive load IF(AV) 150 mA Repetitive Peak Forward Current at Tamb=25°C IFRM 300 mA Non-Repetitive Surge Forward Current at t<1s and Tj=25oC 500 mA at t≦8.3ms and Tj=25oC IFSM 1000 mA 1) Valid provided that electrodes are kept at ambient temperature. ELECTRICAL CHARACTERISTICS1) Parameter at Tamb=25oC1) Symbol Value Unit Forward Voltage at IF=10mA 1.0 MAX V at IF=100mA VF 1.25 MAX V Leakage Current at VR=20V 0.025 MAX uA Leakage Current at VR=75V IR 5 MAX uA Capacitance at VR=0V, f=1MHz Ctot 4 MAX pF Reverse Recovery Time at IF =IR=10mA,RL=100Ω trr 4 MAX ns 1) Valid provided that electrodes are kept at ambient temperature. Switching Diode |
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