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18N20 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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18N20 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 18N20 · FEATURES · Drain Current ID= 18A@ TC=25℃ · Static drain-source on-resistance: RDS(on) ≤0.092Ω · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Switch regulators · Switching converters, motor drivers, relay drivers · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pulsed 72 A PD Total Dissipation @TC=25℃ 57 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 2.19 ℃ /W |
Similar Part No. - 18N20 |
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Similar Description - 18N20 |
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