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60N06 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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60N06 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 60N06 · DESCRIPTION · Drain Current ID= 60A@ TC=25℃ · Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) · Fast Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · General purpose power amplifier High current,high speed switching Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 60 A Drain Current-continuous@ TC=100℃ 39 ID(puls) Pulse Drain Current 120 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃ /W |
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