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MB1M Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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MB1M Datasheet(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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1 / 3 page ![]() 0.8 0.8 MBM B M MBM MB1M THRU MB10M 1 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. A GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current – A FEATURES High current capability Low forward voltage drop Glass Passivated Chip Junction Low power loss, high efficiency Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.22g / 0.008oz 1.Input pin(-) 2.Input pin(+) 3.Output Anode(~) 4.Output Cathode(~) M Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Parameter Symbols MB1M MB2M MB4M MB6M MB8M MB10M Units Maximum Repetitive Peak Reverse Voltage VRRM 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 100 200 400 600 800 1000 V Average Rectified Output Current I(AV) 0.5/0.8 A Peak Forward Surge Current 8.3 ms Single Half Sine-Wave Superimposed on Rated Load(JEDEC method) IFSM 30 A Forward Voltage per element @IF =0.5A and 25°C VF 1.0 V Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25°C IR 5 μA @ TA=125°C 500 Typical Junction Capacitance ( Note1) Cj 13 pF Typical Thermal Resistance ( Note2) RθJA/ RθJC 70/20 °C/W Operating and Storage Temperature Range Tj, Tstg -55 ~ +150 °C (1)Measured at 1 MHz and applied reverse voltage of 4 V D.C (2)Mounted on glass epoxy PCB board with 4×1.5"×1.5"(3.81×3.81 cm) copper pad. |
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