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SD103AX Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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SD103AX Datasheet(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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1 / 3 page ![]() SD103AX SOD-523 1 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Low forward voltage drop. Guard ring construction for transient protection. Low reverse recovery time. Low reverse capacitance. Schottky barrier application. Parameter Symbol Limits Unit DC Reverse voltage VR 40 V Continuous forward current IF 350 mA Repetitive peak forward current @t≤1.0s IFRM 1 A Total power dissipation Ptot 400 mW Total resistance junction to ambient RθJA 300 ℃/W Junction temperature Tj 125 ℃ Storage temperature Tstg -65-125 ℃ Parameter Symbol Min. Typ. Max. Unit Conditions Reverse breakdown voltage V(BR)R 40 V IR=100μA Forward voltage VF 0.37 0.60 V IF=20mA IF=200mA Reverse current IR 5.0 μA VR=30V Diode capacitance Cd 50 pF VR=0V,f=1MHz Reverse recovery time trr 10 ns IF=IR=50mA,RL=100Ω Schottky Barrier Diode ■ Simplified outline(SOD-523) 1 2 Marking S4 ■ Marking Top View 1.Cathode 2.Anode FEATURES APPLICATIONS MAXIMUM RATING @ Ta=25°C unless otherwise specified ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified |
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