1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

JFET VHF Amplifier

N–Channel — Depletion

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain – Source Voltage

VDS

25

Vdc

Drain – Gate Voltage

VDG

25

Vdc

Gate – Source Voltage

VGS

–25

Vdc

Gate Current

IG

10

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

350

2.8

mW

mW/

°C

Junction Temperature Range

TJ

125

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Gate – Source Breakdown Voltage

(IG = –10 µAdc, VDS = 0)

V(BR)GSS

–25

—

Vdc

Gate Reverse Current

(VGS = –15 Vdc, VDS = 0)

(VGS = –15 Vdc, VDS = 0, TA = 100°C)

IGSS

—

—

–2.0

– 2.0

nAdc

µAdc

Gate – Source Cutoff Voltage

(VDS = 15 Vdc, ID = 2.0 nAdc)

VGS(off)

—

– 8.0

Vdc

Gate – Source Voltage

(VDS = 15 Vdc, ID = 0.2 mAdc)

VGS

–0.5

–7.5

Vdc

ON CHARACTERISTICS

Zero – Gate –Voltage Drain Current(1)

(VDS = 15 Vdc, VGS = 0 Vdc)

IDSS

2.0

20

mAdc

SMALL– SIGNAL CHARACTERISTICS

Forward Transfer Admittance(1)

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)

(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

yfs

2000

1600

7500

—

mmhos

Input Admittance

(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

Re(yis)

—

800

mmhos

Output Conductance

(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

Re(yos)

—

200

mmhos

Input Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

—

7.0

pF

Reverse Transfer Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Crss

—

3.0

pF

1. Pulse Test; Pulse Width

v 630 ms, Duty Cycle v 10%.

Order this document

by MPF102/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MPF102

CASE 29–04, STYLE 5

TO–92 (TO–226AA)

1

2

3

1 DRAIN

2 SOURCE

3

GATE