Switching Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

15

Vdc

Collector–Emitter Voltage

VCES

40

Vdc

Collector–Base Voltage

VCBO

40

Vdc

Emitter–Base Voltage

VEBO

4.5

Vdc

Collector Current — Continuous

IC

200

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(1)

(IC = 10 mAdc, IB = 0)

MPS2369A

V(BR)CEO

15

—

—

Vdc

Collector–Emitter Breakdown Voltage

(IC = 10 µAdc, VBE = 0)

MPS2369,A

V(BR)CES

40

—

—

Vdc

Collector–Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

MPS2369,A

V(BR)CBO

40

—

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

MPS2369,A

V(BR)EBO

4.5

—

—

Vdc

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

(VCB = 20 Vdc, IE = 0, TA = 125°C)

MPS2369,A

ICBO

—

—

—

—

0.4

30

µAdc

Collector Cutoff Current

(VCE = 20 Vdc, VBE = 0)

MPS2369,A

ICES

—

—

0.4

µAdc

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductort

© Semiconductor Components Industries, LLC, 2001

June, 2001 – Rev. 2

1

Publication Order Number:

MPS2369/D

MPS2369

MPS2369A

*ON Semiconductor Preferred Device

CASE 29–11, STYLE 1

TO–92 (TO–226AA)

1

2

3

*

COLLECTOR

3

2

BASE

1

EMITTER