MPS3906

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = –0.1 mAdc, VCE = –1.0 Vdc)

(IC = –1.0 mAdc, VCE = –1.0 Vdc)

(IC = –10 mAdc, VCE = –1.0 Vdc)

(IC = –50 mAdc, VCE = –1.0 Vdc)

(IC = –100 mAdc, VCE = –1.0 Vdc)

hFE

60

80

100

60

30

—

—

300

—

—

—

Collector – Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

VCE(sat)

—

—

–0.25

–0.4

Vdc

Base – Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

VBE(sat)

–0.65

—

–0.85

–0.95

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –20 V, f = 100 MHz)

fT

250

—

MHz

Output Capacitance

(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

4.5

pF

Input Capacitance

(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

—

10

pF

Input Impedance

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hie

2.0

12

k

Ω

Voltage Feedback Ratio

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hre

1.0

10

X 10– 4

Small–Signal Current Gain

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hfe

100

400

—

Output Admittance

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hoe

3.0

60

mmhos

Noise Figure

(IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz)

NF

—

4.0

dB

SWITCHING CHARACTERISTICS

Delay Time

(VCC = –3.0 Vdc, VBE(off) = + 0.5 Vdc,

IC = –10 mAdc, IB1 = 1.0 mAdc)

td

—

35

ns

Rise Time

(VCC = –3.0 Vdc, VBE(off) = + 0.5 Vdc,

IC = –10 mAdc, IB1 = 1.0 mAdc)

tr

—

50

ns

Storage Time

(VCC = –3.0 Vdc, IC = –10 mAdc,

IB1 = IB2 = –1.0 mAdc)

ts

—

600

ns

Fall Time

IB1 = IB2 = –1.0 mAdc)

tf

—

90

ns

1. Pulse Test: Pulse Width = 300

ms; Duty Cycle = 2.0%.