MPS6428

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(VCE = 5.0 Vdc, IC = 0.01 mAdc)

(VCE = 5.0 Vdc, IC = 0.1 mAdc)

(VCE = 5.0 Vdc, IC = 1.0 mAdc)

(VCE = 5.0 Vdc, IC = 10 mAdc)

hFE

250

250

250

250

—

650

—

—

—

Collector – Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)

(IC = 100 mAdc, IB = 5.0 mAdc)

VCE(sat)

—

—

0.2

0.6

Vdc

Base – Emitter On Voltage

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

VBE(on)

0.56

0.66

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = 1.0 mAdc, VCE = 5.0 V, f = 100 MHz)

fT

100

700

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

3.0

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

—

8.0

pF

Input Impedance

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

hie

3.0

30

k

Ω

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

hre

2.0

20

X 10–4

Small–Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

hfe

200

800

—

Output Admittance

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

hoe

5.0

50

mmhos

NOISE FIGURE/TOTAL NOISE VOLTAGE CHARACTERISTICS

NF

VT

NF

VT

NF

VT

Max (1)

Max (2)

Max (3)

Unit

Noise Figure/Voltage

(VCE = 5.0 V, IC = 0.1 mA, TA = 25°C)

7.0

18.1

6.0

5700

3.5

4.3

dB

nV

1. RS = 10 kΩ, BW = 1.0 Hz, f = 100 Hz

2. RS = 50 kΩ, BW = 15.7 kHz, f = 10 Hz–10 kHz

3. RS = 500 Ω, BW = 1.0 Hz, f = 10 Hz