MPS6601 datasheet(2/8 Pages) ONSEMI

2 / 8 page

MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

MPS6601/6651

MPS6602/6652

V(BR)CEO

−

Vdc

Collector −Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

MPS6601/6651

MPS6602/6652

V(BR)CBO

−

Vdc

Emitter −Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

4.0

−

Vdc

Collector Cutoff Current

(VCE = 25 Vdc, IB = 0)

MPS6601/6651

(VCE = 30 Vdc, IB = 0)

MPS6602/6652

ICES

−

0.1

mAdc

Collector Cutoff Current

(VCB = 25 Vdc, IE = 0)

MPS6601/6651

(VCB = 30 Vdc, IE = 0)

MPS6602/6652

ICBO

−

0.1

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1000 mAdc, VCE = 1.0 Vdc)

hFE

−

Collector −Emitter Saturation Voltage

(IC = 1000 mAdc, IB = 100 mAdc)

VCE(sat)

−

0.6

Vdc

Base−Emitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc)

VBE(on)

−

1.2

Vdc

SMALL− SIGNAL CHARACTERISTICS

Current −Gain — Bandwidth Product

(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)

100

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

SWITCHING CHARACTERISTICS

Delay Time

(VCC = 40 Vdc, IC = 500 mAdc,

IB1 = 50 mAdc,

tp w 300 ns Duty Cycle)

−

Rise Time

−

Storage Time

−

250

Fall Time

−

MPS6601 Datasheet(PDF) 2 Page - ON Semiconductor

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