MPS6726 MPS6727

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = –100 mAdc, VCE = –1.0 Vdc)

(IC = –1000 mAdc, VCE = –1.0 Vdc)

hFE

60

50

—

250

—

Collector – Emitter Saturation Voltage

(IC = –1000 mAdc, IB = –100 mAdc)

VCE(sat)

—

–0.5

Vdc

Base – Emitter On Voltage

(IC = –1000 mAdc, VCE = –1.0 Vdc)

VBE(on)

—

–1.2

Vdc

SMALL– SIGNAL CHARACTERISTICS

Collector–Base Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Ccb

—

30

pF

Small–Signal Current Gain

(IC = –50 mAdc, VCE = –10 Vdc, f = 20 MHz)

hfe

2.5

25

—

1. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2.0%.

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

Figure 3. “ON” Voltages

Figure 4. Temperature Coefficient

–1000

–10

IC, COLLECTOR CURRENT (mA)

200

100

70

IB, BASE CURRENT (mA)

–5.0

–50

–0.6

–0.2

0

–100

–500

–1.0

IC, COLLECTOR CURRENT (mA)

0

–1.0

–0.8

–0.6

–0.4

–0.2

IC, COLLECTOR CURRENT (mA)

–0.8

–1.2

–1.6

–2.0

–2.4

–2.8

–200

50

20

–100

–20

–50

–200

–500

–10 –20

–0.05 –0.1 –0.2

–2.0

–0.4

–0.8

–1.0

–2.0

–5.0

–10

–20

–50

TJ = 25°C

VBE(SAT) @ IC/IB = 10

–0.01

–0.5 –1.0

–0.02

–100

–1000

–100

–500

–1.0

–200

–2.0

–5.0

–10

–20

–50

qVB for VBE

–1000

VCE = –1.0 V

TJ = 25°C

VCE(SAT) @ IC/IB = 10

VBE(ON) @ VCE = –1.0 V

TJ = 25°C

IC =

–100

mA

IC =

–50 mA

IC =

–1000 mA

IC =

–10 mA

IC =

–500 mA

IC =

–250

mA