MPSA75 MPSA77

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

200

–1.0

2.0

TA = 125°C

25

°C

–55

°C

VCE = –2.0 V

–2.0

–3.0

–5.0

–7.0

–10

–20

–30

–50

–100

–300

100

70

50

30

20

10

7.0

5.0

3.0

–0.3

–0.5

–0.7

–70

–200

–5.0 V

–10 V

IC, COLLECTOR CURRENT (mA)

Figure 2. “On” Voltage

–2.0

0

–0.3

TA = 25°C

VBE(on) @ VCE = –5.0 V

–1.6

–1.2

–0.8

–0.4

VCE(sat) @ IC/IB = 1000

IC/IB = 100

–0.5

–1.0

–2 –3 –5

–10

–20 –30 –50

–100 –200 –300

IB, BASE CURRENT (µA)

Figure 3. Collector Saturation Region

–2.0

–0.6

TA = 25°C

IC =

–1.8

–1.6

–1.4

–1.2

–1.0

–0.8

–0.1–0.2

–1 –2

–5 –10 –20 –50 –100–200 –500

–0.5

–1K–2K

–10K

–10 mA –50 mA –100 mA –175 mA

–300 mA

10

4.0

3.0

2.0

0.1

Figure 4. High Frequency Current Gain

IC, COLLECTOR CURRENT (mA)

VCE = –5.0 V

f = 100 MHz

TA = 25°C

1.0

0.4

0.2

–1.0 –2.0

–5.0

–10

–20

–50

–100 –200

–500

–1K

VCE, COLLECTOR VOLTAGE (VOLTS)

–6.0

–10

–20

Figure 5. Active Region, Safe Operating Area

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

–300

–200

–100

–50

–20

–10

–40 –60

100

µs

1.0 ms

TA = 25°C

–1000

(DUTY CYCLE

≤ 10%)

1.0 s

TC = 25°C

MPSA75

–1.0

–2.0

–4.0

MPSA77

VBE(sat) @ IC/IB = 100

–5K