MPSW45 MPSW45A

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 200 mAdc, VCE = 5.0 Vdc)

(IC = 500 mAdc, VCE = 5.0 Vdc)

(IC = 1.0 Adc, VCE = 5.0 Vdc)

hFE

25,000

15,000

4,000

150,000

—

—

—

Collector – Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 2.0 mAdc)

VCE(sat)

—

1.5

Vdc

Base– Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 2.0 mAdc)

VBE(sat)

—

2.0

Vdc

Base – Emitter On Voltage

(IC = 1.0 Adc, VCE = 5.0 Vdc)

VBE(on)

—

2.0

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

—

MHz

Collector–Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Ccb

—

6.0

pF

1. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2.0%.

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model