P0420AI datasheet(2/6 Pages) UNIKC

2 / 6 page

P0420AI / P0420AD

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

200

±100

0.5

0.7

504

1.6

108

382

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

UNIT

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

IF = 4A, dlF/dt = 100A / mS

VDS = 100V, ID @ 4A, VGS = 10V

Forward Voltage

Reverse Recovery Time

VSD

td(on)

trr

Qrr

Reverse Recovery Charge

Gate-Source Charge

Reverse Transfer Capacitance

IF =4A, VGS = 0V

td(off)

Continuous Current

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

V(BR)DSS

Zero Gate Voltage Drain Current

Gate-Body Leakage

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Input Capacitance

Output Capacitance

Gate-Drain Charge

Total Gate Charge

Qgd

Qgs

VGS = 0V, VDS = 25V, f = 1MHz

Drain-Source Breakdown Voltage

VGS = 10V, ID = 2A

VDS = 10V, ID = 4A

VGS(th)

Forward Transconductance

VGS = 0V, ID = 250mA

Gate Threshold Voltage

DYNAMIC

Drain-Source On-State

Resistance

VDS = VGS, ID = 250mA

VDS = 160V, ID = 4A, VGS = 10V

Ciss

Coss

Crss

VDS = 200V, VGS = 0V

IGSS

IDSS

RDS(ON)

VDS = 160V, VGS = 0V , TJ = 125 °C

VDS = 0V, VGS = ±20V

gfs

STATIC

Ver 1.1

2013-3-13

P0420AI Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

P0420AI Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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