P0470ATFS datasheet(2/6 Pages) UNIKC

2 / 6 page

P0470ATF / P0470ATFS

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

700

2.5

3.3

4.5

±100

2.1

2.8

824

16.4

6.4

4.7

11.7

10.7

1.5

270

2.1

μC

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

VDD = 560V, ID= 4A, VGS=10V

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

IF = 4A , dlF/dt = 100A / μS

VGS = 0V, VDS = 25V, f = 1MHz

STATIC

IGSS

SYMBOL

VGS(th)

VDS = VGS, ID = 250mA

LIMITS

UNIT

Coss

Crss

IDSS

RDS(ON)

DYNAMIC

VDS = 700V, VGS = 0V, TC = 25 °C

Drain-Source On-State

Resistance

gfs

Ciss

VDS = 560V, VGS = 0V , TC= 125 °C

VDS = 0V, VGS = ±30V

Drain-Source Breakdown Voltage

VGS = 10V, ID = 2A

VDS = 10V, ID = 2A

Forward Transconductance

VGS = 0V, ID = 250mA

V(BR)DSS

Gate Voltage Drain Current

Gate-Body Leakage

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

trr

Input Capacitance

Output Capacitance

IF = 4A, VGS = 0V

VDD = 350V, ID = 4A, RG =6Ω

td(on)

td(off)

Reverse Transfer Capacitance

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Turn-On Delay Time

Turn-Off Delay Time

Fall Time

Rise Time

PARAMETER

Gate Threshold Voltage

TEST CONDITIONS

Ver 1.0

2012/8/29

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